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| SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 - NOVEMBER 1995 7 FCX596 D PARTMARKING DETAIL P96 S G SOT89 SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg VALUE -220 -200 -5 -1 -0.3 -200 1 -65 to +150 MAX. UNIT CONDITIONS. V V V -100 -100 -100 -0.2 -0.35 -1.0 -0.9 100 100 85 35 150 10 nA nA nA V V V V IC=-100A IC=-10mA* IE=-100A VCB=-200V VEB=-4V VCES=-200V IC=-100mA,IB=-10mA IC=-250mA IB=-25mA* IC=-250mA,IB=-25mA* IC=-250mA,VCE=-10V* IC=-1mA, VCE=-10V IC=-100mA,VCE=-10V* IC=-250mA,VCE=-10V* IC=-400mA,VCE=-10V, MHz IC=-50mA, VCE=-10V f=100MHz pF VCB=-10V, f=1MHz D ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Cut-Off Current Saturation Voltages Base-Emitter Turn-on Voltage Static Forward Current Transfer Ratio UNIT V V V A A mA W C ELECTRICAL CHARACTERISTICS (at Tamb = 25C). SYMBOL MIN. V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO ICES VCE(sat) VBE(sat) VBE(on) hFE -220 -200 -5 300 Transition Frequency Output Capacitance fT Cobo *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% For typical Characteristics graphs see FMMT596 datasheet. 3 - 95 |
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